IRF150 DATASHEET PDF

Nell High Power Products. The Nell IRF is a three-terminal silicon device. They are designed for use in applications such as. Ultra low gate charge nC Max. Low reverse transfer capacitance. Fast switching capability.

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Data Sheet. March File Number All of. These types can be operated directly from integrated. Formerly Developmental Type TA Ordering Information.

NOTE: When ordering, include the entire part number. Drain to Source Voltage Note 1. V DGR. Continuous Drain Current. Pulsed Drain Current Note 3. Gate to Source Voltage. Maximum Power Dissipation. Linear Derating Factor.

Operating and Storage Temperature. Maximum Temperature for Soldering. Leads at 0. Package Body for 10s, See Techbrief T pkg. This is a stress only rating and operation of the. Drain to Source Breakdown Voltage.

Gate to Threshold Voltage. Zero Gate Voltage Drain Current. On-State Drain Current Note 2. Gate to Source Leakage Current. Drain to Source On Resistance Note 2. Forward Transconductance Note 2. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. Total Gate Charge. Gate to Source Charge. Input Capacitance.

Output Capacitance. Reverse Transfer Capacitance. Internal Drain Inductance. I DSS. Essentially Independent of Operating Temperature. Q g TOT. C OSS. C RSS. Contact Screw on the. Symbol Showing the. Flange that is Closer to Internal Devices. Source and Gate Pins and Inductances. Internal Source Inductance. Thermal Impedance Junction to Case.

Thermal Impedance Junction to Ambient. L S Measured from the. Source Lead, 6mm. Free Air Operation. Download IRF Datasheet. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated circuits. P D Linear Derating Factor. NOTE: 1.

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