Pb Free Plating Product. General Description. This N-channel enhancement mode field-effect power transistor. Also, especially designed to minimize rds on and high rugged.
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Pb Free Plating Product. General Description. This N-channel enhancement mode field-effect power transistor. Also, especially designed to minimize rds on and high rugged. The TOM pkg is well suited for. V DSS. V GSS. Drain-Source Voltage. Drain Current. Drain Current - Pulsed. Note 1. Gate-Source Voltage. Single Pulsed Avalanche Energy.
Note 2. Avalanche Current. Repetitive Avalanche Energy. Note 3. Operating and Storage Temperature Range. Maximum lead temperature for soldering purposes,.
Thermal Characteristics. Thermal Resistance, Junction-to-Case. Thermal Resistance, Case-to-Sink. Thermal Resistance, Junction-to-Ambient. Typ Max. Electrical Characteristics. Test Conditions. Min Typ Max Units. Off Characteristics. BV DSS. Drain-Source Breakdown Voltage. Breakdown Voltage Temperature. I DSS. I GSSF. Zero Gate Voltage Drain Current. Gate-Body Leakage Current, Forward. I GSSR. On Characteristics. V GS th. R DS on. Gate Threshold Voltage.
Static Drain-Source. Dynamic Characteristics. C iss Input Capacitance. C oss. Output Capacitance. C rss Reverse Transfer Capacitance. Switching Characteristics. Turn-On Delay Time. Turn-Off Delay Time. Q g Total Gate Charge. Q gs Gate-Source Charge. Q gd Gate-Drain Charge. Note 4, 5. Q rr Reverse Recovery Charge. Note 4. Repetitive Rating : Pulse width limited by maximum junction temperature.
Essentially independent of operating temperature. Also, especially designed to minimize rds on and high rugged avalanche characteristics.
The TOM pkg is well suited for adaptor power unit and small power inverter application. Repetitive Rating : Pulse width limited by maximum junction temperature 2. Essentially independent of operating temperature Rev.
FQP50N06 MOSFET. Datasheet pdf. Equivalent
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FQP50N06 Datasheet PDF