December 1 Rev 1. Philips Semiconductors. Silicon Diffused Power Transistor. Product specification. New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in. V CESM.
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Want to post a buying lead? Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon. Select All. Download : Click here to Download. Attentive hint. How to buy? How long will receive a response. New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receivers and PC monitors.
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and p. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
Collector to emitter voltage Collector to emitter voltage open base Collector current DC Collector current peak value Base current DC Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature. Collector-emitter voltage peak value Collector-emitter voltage open base Collector current DC Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fig 17 Diode forward voltage Fall time.
BU4522AX Silicon Diffused Power Transistor
December 1 Rev 1. December 2 Rev 1. Test circuit for VCEOsust. Switching times waveforms 64 kHz. Oscilloscope display for VCEOsust. Switching times definitions.
BU4522AX Datasheet PDF
BU4522AF, BU4522AX, BU4522DF
TRANSISTOR HORIZONTAL BU4522AX